Comment on "single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity".
نویسندگان
چکیده
The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of 78%.
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ورودعنوان ژورنال:
- Physical review letters
دوره 90 22 شماره
صفحات -
تاریخ انتشار 2001